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掲載中 応募受付中 掲載日: 2026年7月31日

ルネサス エレクトロニクス株式会社

Principal Medium Voltage (MV) Power MOSFET Process Integration Engineer

デバイス開発エンジニアパワーデバイス前工程プロセス開発
想定年収 年収500万~700万円、年収300万~500万円、年収300万円未満
勤務地 山形県

Smart Overview

次世代の中電圧(MV)シールドゲートトレンチMOSFET技術の設計・開発において、重要な役割を担うエンジニアを募集します。デザイン、アプリケーション、マーケティングチーム及び外部ファウンドリパートナーとの緊密な協力を通じて、革新を推進し、製品の工業化を加速します。パワー半導体の物理学及びプロセス開発に15年の経験を持ち、TCADツールの実務経験がある方を歓迎します。透明性、機敏性、革新性を重視する文化の中で、最先端の技術に携わり、次世代の半導体技術を共に形作るチャンスです。

【おすすめポイント】
・次世代技術の開発に直接関与できる
・国際的なチームでの協力が可能
・競争力のある福利厚生を提供

募集職種

デバイス開発エンジニア

パワーデバイス

前工程プロセス開発

仕事内容

Job Description



We are looking for a highly motivated and skilled engineer to join our Medium Voltage (MV) Power Trench MOSFET Team. The successful candidate will play a key role in the design and development of next-generation MV shielded-gate trench MOSFET technologies. This role involves close collaboration with the design, application, and marketing teams, as well as external foundry partners, to drive innovation, optimize performance, and accelerate product industrialization.

Key Responsibilities:

Define and establish key process modules for next-generation MV shielded-gate trench MOSFET technology
Set up key process modules required for the development of cutting-edge MV shielded-gate trench MOSFET technologies
Perform wafer probing and analyze assembled product performance data for each development cycle
Analyze wafer-level electrical test results and package-level performance data for each development iteration
Support derivative technology development based on proven technology platforms
Lead yield improvement activities and support technology transfer to mass production
Contribute to the development of derivative products based on established and mature technology platforms


Qualifications


Ph.D. (preferred) or M.S. in Electrical Engineering, Physics, or a related field
Up to 15 years of experience in power semiconductor device or process development, preferably with a focus on Si-based MV shielded-gate trench MOSFETs
Solid understanding of power device physics and semiconductor fabrication processes
Hands-on experience with TCAD tools and simulation-based device analysis
Intermediate-level proficiency in both written and spoken English and Japanese


Additional Information



Renesas is an embedded semiconductor solution provider driven by its Purpose, To Make Our Lives Easier. With a global team of over 21,000 engineers and problem solvers in more than 30 countries, we offer the opportunity to work on world‑leading technology for Automotive, Industrial, Infrastructure, and IoT, shaping a safer, healthier, greener, and smarter future.

At Renesas, TAGIE is our culture, grounded in being Transparent, Agile, Global, Innovative, and Entrepreneurial. It shapes how we work, grow and deliver on our purpose together. This collaborative spirit and mindset drive our semiconductor technology to transform industries and impact millions of lives.

We believe in rewarding our employees with a competitive benefits package alongside their salary. More information will be provided during the hiring process.

Are you ready to join our team and shape the future with us?

Renesas Electronics is an equal opportunity and affirmative action employer, committed to supporting diversity and fostering a work environment free of discrimination on the basis of sex, race, religion, national origin, gender, gender identity, gender expression, age, sexual orientation, military status, veteran status, or any other basis protected by law. For more information, please read our Diversity & Inclusion Statement.

勤務地

勤務地

山形県

会社概要

ルネサス エレクトロニクス株式会社